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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTC3553T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D made small and slim. High Allowable Power Dissipation. Complementary to KTA1553T. C L G Ultrasmall-Sized Package permitting applied sets to be 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 60 50 6 5 7 1.2 0.9 150 -55 ) 150 UNIT V V V A A W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=2A, IB=40mA IC=2A, IB=40mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =12V 24 OUTPUT MIN. 60 50 6 200 - Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =2.5A 2001. 6. 28 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM HM TYP. 100 0.80 330 26 32 MAX. 0.1 0.1 150 1.2 560 MHz pF UNIT A A V V V mV V - 420 - nS - 28 - 1/3 KTC3553T I C - V CE 5 COLLECTOR CURRENT I C (A) 0m A h FE - I C 50mA 1K 40mA 4 3 2 1 0 0 90mA 80mA 70mA 60mA 30mA 20mA DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C 10 10mA 100 50 30 VCE =2V IB=0mA 100 200 300 400 500 10 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) I C /I B =20 VCE(sat) - I C 2k 1k 500 300 100 50 30 10 0.01 75 Ta= Ta=2 5C I C /I B =50 100 50 30 = Ta 75 C =Ta 25 C C -2 Ta= 5C 25 Ta= C 10 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 0.03 0.05 0.1 0.3 0.5 1 3 5 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 5K 3K COLLECTOR CURRENT I C (A) IC /IB =50 I C - V BE 1.0 0.9 0.8 0.7 0.6 Ta=75 C VCE =2V 500 300 Ta=25 C Ta=75 C 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 100 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 0.6 0.7 Ta=-25 1K Ta=-25 C 0.5 Ta=25 C C 0.8 0.9 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 28 Revision No : 0 2/3 KTC3553T f T - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =10V C ob - V CB 1K 500 300 f=1MHz 100 50 30 100 50 30 10 0.01 10 1 3 5 10 3 0 50 COLLECTOR-BASE VOLTAGE VCB (V) 0.03 0.05 0.1 0.3 0.5 1 3 5 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 IC MAX.(PULSED) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 10 1m S* 50 0 S* I C MAX (CONTINUOUS) S* 0 10 DC 10 OP ER AT m 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0m S* S* IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 0.3 1 3 10 30 100 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 28 Revision No : 0 3/3 |
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